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| STC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-252 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation( Tc=25C) Collector dissipation( Ta=25C) Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG RATING 40 30 5 10 1 3 7 0.6 150 -55 ~ +150 UNIT V V V W W A A A C C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current DC current gain(note 1) SYMBOL ICBO IEBO hFE1 hFE2 TEST CONDITIONS VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN TYP MAX 1000 1000 UNIT nA nA 30 100 200 150 0.3 1.0 80 45 0.5 2.0 V V MHz pF Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT Output capacitance Cob Note 1:Pulse test:PW<300s,Duty Cycle<2% 1 STC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE A 100-200 B 200-300 TYPICAL PARAMETERS PERFORMANCE Fig.1 Static characteristics 150 Fig.2 Derating curve of safe operating areas 12 Fig.3 Power Derating -Ic,Collector current(A) 1.6 1.2 -IB=6mA -IB=5mA 100 Power Dissipation(W) 150 200 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA S/ b 8 0.8 lim ite d D pa si is -IB=4mA -IB=3mA 0.4 50 4 n tio lim -IB=2mA -IB=1mA 0 d ite 0 0 4 8 12 16 20 0 -50 0 50 100 -50 0 50 100 150 200 -Collector-Emitter voltage(V) Tc,Case Temperature(C) Tc,Case Temperature(C) Fig.4 Collector Output capacitance 3 10 3 10 Fig.5 Current gainbandwidth product 1 10 Fig.6 Safe operating area Ic(max),Pulse 10 mS 1m S 0. 1m S Output Capacitance(pF) FT(MHz), Current gainbandwidth product 2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) Ic(max),DC 10 0 IB=8mA 1 10 1 10 -1 10 0 10 10 0 -1 10 -2 10 -3 10 0 10 -2 10 -1 10 10 0 1 10 -2 10 10 0 1 10 2 10 -Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage Fig.7 DC current gain 3 10 4 10 Fig.8 Saturation Voltage VCE=-2V -Saturation Voltage(mV) DC current Gain,H FE 3 10 VBE(sat) 2 10 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) -Ic,Collector current(mA) 2 |
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